Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation
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Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation Munehiro Tada, Jin-Hong Park, Duygu Kuzum,* Gaurav Thareja, Jinendra Raja Jain, Yoshio Nishi,** and Krishna C. Saraswat Department of Electrical Engineering, Stanford University, Center for Integrated Systems, Stanford, California 94305, USA NEC Corporation, Device Platforms Research Laboratories, Kanagawa 229-1198, Japan
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تاریخ انتشار 2010